Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

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Dopant profiling in silicon nanowires measured by scanning

Growth of nanowire heterostructures and their optoelectronic and spintronic applications - ScienceDirect

Nanomaterials, Free Full-Text

Nanomaterials, Free Full-Text

Frontiers ZnO Nanowires/N719 Dye With Different Aspect Ratio as

Growth of epitaxial silicon nanowires on a Si substrate by a metal

Growth of nanowire heterostructures and their optoelectronic and spintronic applications - ScienceDirect

Template-Grown Metal Nanowires as Resonators: Performance and Characterization of Dissipative and Elastic Properties

Jerome HYUN, Ewha Womans University, Seoul, Department of Chemistry Nano Science

TEM for Characterization of Nanowires and Nanorods

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a)-(c) SEM micrographs of undoped (0A) and Si-doped (11A,13A) GaAs

Nanomaterials, Free Full-Text

PDF] Demonstration of n-type behavior in catalyst-free Si-doped